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The Electrostatic Protection Conditions for 7 nm Extended to the System Terminal 2019/10/07

 

 

  With the burgeoning development of the Internet of Things (IoT) and artificial intelligence (AI) as well as the fermenting 5G business operation, consumers are increasingly demanding fast computing capability. In order to meet the requirements of the terminal, system operators are all committed to developing products with stronger computing power in order to take the lead in the market, in which the efficiency of the CPU's computing function plays a very important role. For instance, Apple A12 processor, AMD Vega 20 graphics IC, Cambrian AI chip, etc., all use TSMC 7nm process as their design architecture, which has the advantages of increased CPU computational efficiency, reduced overall power consumption, reduced wafer size, and increased flexibility of the design of the system products.

 

 

  The permeation the 7nm process in IC is quite extensive. Bitmains new ASIC (Application Specific Integrated Circuit) utilizes 7nm FinFET to enhance the computing speed to meet the mining needs. In response to the Esports market and high-end graphics requirements, providing efficient resolution and low-latency image quality has become the most basic capability of GPU manufacturers. With respect to more competitive image output, nVDIA uses EUV lithography technology to make its next generation 7nm Ampere series of graphics chips. It can not only improve overall performance but also reduce IC power consumption so that NB and other platforms equipped with its GPU can have a longer battery life performance. Nowadays, in the fields of data center, mobile phone, PC, AI, etc., the latest advanced processes have been applied to achieve the demand for hardware performance. The miniaturization and improvement of the yield rate in the manufacturing process are also the goal of continuously maintaining competitiveness of various semiconductor foundries.

 

  Despite the fact that the evolution of the CMOS process has improved its performance and power consumption, it still has a reliability issue. The gate oxide layer in the wafer circuit fabricated by the advanced process technology is so thin that the electric field strength caused by the same voltage condition is stronger, making the gate oxide layer more susceptible to damage. This is why the reduced size of the component has reduced electrostatic protection capability, leading to an increase in the probability of IC damage. In particular, today's system products demand light and portable, and the component density of PCB boards is increasing, hence, the threat to ESD is becoming more and more imminent.

 

 As system products widely use 7nm processors, the voltage required to maintain their operation is also dominated by low voltages under 3.3V, such as 2.5V, 1.8V, and 1.2V. The advantage of low voltage is reduced power consumption but the tolerance for power noise is also reduced. In addition, when the processor suffers from a surge, it is more likely to cause software fail or even hardware fail. The handheld product frequently charging and discharging the battery also increase the threat of the EOS to the power distribution system. In order to meet the challenge of ESD/EOS on the power supply field, AMAZING Microelectronic Corp. has developed low voltage ESD/EOS protection components (Figure 1) for protection requirements of power supplies, which can be protected according to different voltage requirements. The disadvantage of using the Zener diode as the protection component of the power supply in the early stage is that the leakage current is relatively large, which is about 1 mA. The TVS component developed by AMAZING Microelectronic Corp. has a leakage current of only 1μA. For the hand-held products that demand power-saving, it can provide more competitive leakage current control. Today's electronics PCB layout space is less than adequate. For system designers, small package sizes will be easier to put into the system to realize a complete ESD/EOS protection. The AZ6225-01F, AZ6118-01F, and AZ6112-01F low-voltage solution packages introduced by AMAZING Microelectronic Corp. are only 0402 (1.0mm x 0.6mm) and the single ESD withstanding in Air/Contact reaches 30kV, making TVS a low clamping voltage and high EOS protection. (Figure 1)

 

  The low-voltage TVS series offers the most comprehensive protection against various ESD/EOS threats that advanced processes encounter to improve the stability and reliability of electronic products. AMAZING Microelectronic Corp. continues to focus on market demands and develops protective components that can solve customer problems, and strives to ensure that electronic products maintain good business reputation in the market.

 

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Figure 1. Amazing low voltage TVS solution

 

 

 

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